Ferroelectric Testers & Analyzers
Ferroelectric characterization systems evaluate the fundamental physics of spontaneous polarization, domain switching kinetics, and reliability limits in ferroelectric, multiferroic, and piezoelectric materials. Precise extraction of remanent polarization (Pr), coercive field (Ec), and internal bias requires isolating intrinsic ferroelectric switching from parasitic dielectric loss and thermally activated leakage currents.
Engineered with virtual-ground electrometry, microsecond high-voltage breakdown clamping, and automated PUND (Positive-Up Negative-Down) pulse sequencing, the MatMeas ferroelectric portfolio provides comprehensive characterization of P-E hysteresis loops, fatigue degradation, and pulse switching. The instrumentation architecture encompasses dedicated thin-film and FeRAM device characterization (FEAI-1000 with 250 pC charge resolution and ±100V excitation) through to wide-temperature, high-voltage ceramic testing (FMS-1000 with -160°C to 450°C thermal control and ±10kV amplifier integration).
MatMeas FEAI-1000 High-Precision Thin Film Ferroelectric Tester
The MatMeas FEAI-1000 is a research-grade Thin Film Ferroelectric Tester and Analyzer engineered for thin-film capacitors and functional ceramics. Equipped with a precision ±100V source, microsecond breakdown protection, and integrated PUND pulse testing, it delivers exceptional fidelity in P-E hysteresis loops, spontaneous polarization, and leakage current analysis, directly benchmarking the aixACCT TF2000.
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MatMeas FMS-1000 High-Temperature Ferroelectric Tester
The MatMeas FMS-1000 is an extreme-temperature bulk ferroelectric test system (-160°C to 450°C, ±10kV) engineered for bulk functional ceramics and thin films, delivering precise P-E hysteresis loops, fatigue characterization, and dynamic leakage compensation.
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